12/21/2023 0 Comments Emergent phenomena in oxide thin films![]() ![]() By growing LaAl1+yO3 films of different stoichiometry on TiO2-terminated SrTiO3 substrate at high oxygen pressure, it is shown that the behavior of the two-dimensional electron gas at the LaAlO3/SrTiO3 interface can be quantitatively explained by the polar catastrophe mechanism. Creating emergent phenomena in oxide superlattices. Using Sr1+xTi1-xO3, CaMnO3, BaTiO3 and Ruddlesden–Popper phase Lan+1NinO3n+1 (n = 4) as examples, the technique is demonstrated to be effective in producing oxide films with stoichiometric and crystalline perfection. Similarly to SrTiO 3, when KTaO 3 is interfaced with other oxide thin films, such as LaTiO 3 (ref. Stoichiometry for both the cations and oxygen in the oxide films can be controlled. Ablating alternately the targets of constituent oxides, for example SrO and TiO2, a SrTiO3 film can be grown one atomic layer at a time. Reviewed here are the emergent phenomena arising at the interface between oxide materials, which have attracted considerable interest based on advances in thin-film deposition techniques. This thesis presents an approach that combines the strengths of reactive MBE and PLD: atomic layer-by-layer laser MBE (ALL-Laser MBE) using separate oxide targets. On the other hand, conventional PLD using a compound target often results in cation off-stoichiometry in the films. In addition, the need for ozone to maintain low-pressure MBE conditions increases system complexity in comparison to conventional PLD. Reactive MBE is limited to source elements whose vapor pressure is sufficiently high this eliminates a large fraction of 4- and 5-d metals. There are, however, major drawbacks to the two techniques. Reactive MBE employing alternately-shuttered elemental sources (atomic layer-by-layer MBE, or ALL-MBE) can control the cation stoichiometry precisely, thus producing oxide thin films of exceptional quality. Herein, we report the discovery of unexpected superconductivity in orthorhombic-structured thin films of Ti 2 O 3, a 3 d1 electron system, which is in strong contrast to the conventional. PLD possesses experimental simplicity, low cost, and versatility in the materials to be deposited. Reactive molecular-beam epitaxy (MBE) and pulsed-laser deposition (PLD) are the two most successful growth techniques for epitaxial heterostructures of complex oxides. Abstract Advancements in nanoscale engineering of oxide interfaces and heterostructures have led to discoveries of emergent phenomena and new artificial materials. ![]()
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